 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 1/4 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25C) TO-252 * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)..................................................................................... 20 W * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... 100 V VCEO Collector to Emitter Voltage .................................................................................... 100 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current .............................................................................................................. 4 A Characteristics (Ta=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 Cob Min. 100 100 500 1 200 Typ. Max. 10 20 2 2.5 2.8 12 100 Unit V V uA uA mA V V K pF Test Conditions IC=1mA IC=30mA VCB=80V VCE=50V IC=2A, IB=8mA IC=2A, VCE=3V IC=0.5A, VCE=3V IC=2A, VCE=3V IC=4A, VCE=3V VCB=10V *Pulse Test : Pulse Width 380us, Duty Cycle2% HJ112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 125 C 1000 75 C o o Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 2/4 Current Gain & Collector Current 10000 125 C 1000 75 C o o hFE hFE 100 25 C 10 hFE @ VCE=4V 1 1 10 100 1000 10000 o 100 25 C 10 o hFE @ VCE=3V 1 1 10 100 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 25 C 75 C 125 C o o o Saturation Voltage (mV) 1000 25 C o 125 C o 75 C o VCE(sat) @ IC=100IB 100 100 100 100 VCE(sat) @ IC=250IB 1000 10000 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 10000 ON Voltage & Collcetor Current Saturation Voltage (mV) 25 C 1000 o ON Voltage (mV) 25 C 1000 125 C o o 125 C o 75 C o 75 C o VBE(sat) @ IC=250IB VBE(ON) @ VCE=4V 100 100 100 100 1000 10000 1000 10000 Collector Current IC (mA) Collector Current IC (mA) HJ112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 3/4 ON Voltage & Collcetor Current 10000 10 Switching Time & Collector Current VCC=30V, IC=250IB1=-250IB2 25 C 1000 125 C o o Switching Times (us) Tstg ON Voltage (mV) 75 C o 1 Tf Ton VBE(ON) @ VCE=3V 100 100 0.1 1000 10000 1 10 Collector Current IC (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 Safe Operating Area 10000 1000 Collector Current (mA) Capacitance (pF) 100 100 PT=1ms PT=100ms PT=1s Cob 10 10 0.1 1 10 100 1 1 10 100 1000 Reverse-Biased Voltage (V) Forward Voltage (V) PD - Tc 25 PD(W) , Power Dissipation 20 15 10 5 0 0 50 100 150 o 200 Temperature-Tc ( C) HJ112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension A C Spec. No. : HE6030 Issued Date : 1998.07.01 Revised Date : 2002.08.13 Page No. : 4/4 Marking: H 112 Date Code J B D Control Code L F G Style: Pin 1.Base 2.Collector 3.Emitter 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HJ112 HSMC Product Specification |
Price & Availability of HJ112
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |